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PDF NDM3000 Data sheet ( Hoja de datos )
| Número de pieza | NDM3000 | |
| Descripción | 3 Phase Brushless Motor Driver | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NDM3000 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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May 1996
NDM3000
3 Phase Brushless Motor Driver
General Description
The NDM3000 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
Features
±3.0A, ±30V, 2.5W
High density cell design for extremely low RDS(ON).
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
________________________________________________________________________________
11,14
10
12
15
1,16
4,13
8,9
2
5
7
3,6
Q1 Q3 Q5
Q2 Q4 Q6
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage (All Types)
VGSS Gate-Source Voltage (All Types)
ID Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 -
Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
- Pulsed
(Note 1a & 2)
PD Total Power Dissipation
(Note 1a)
Q1+Q4 or Q1+Q6 or Q3+Q2 or
(Note 1b)
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
NDM3000
± 30
± 20
± 3.0
± 10
2.5
1.6
1.4
-55 to 150
Units
V
V
A
W
°C
NDM3000 Rev. E
1 page  
Typical Electrical Characteristics
2
VGS = 10 V
1.5
1
TJ = 125°C
25°C
-55°C
0.5
0
3 6 9 12
I D , DRAIN CURRENT (A)
15
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
2
VGS = -10V
1.5
TJ = 125°C
25°C
1
-55°C
0.5
0
-3 -6 -9 -12
I D , DRAIN CURRENT (A)
-15
Figure 8. P-Channel On-Resistance Variation with
Drain Current and Temperature.
10
VDS = 10V
8
6
TJ = -55°C
125°C
25°C
4
2
0
1234
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 9. N-Channel Transfer
Characteristics.
5
1.2
1.1 V DS = V GS
I D = 250µA
1
0.9
0.8
0.7
0.6
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
-10
VDS = -10V
-8
TJ = -55°C
25°C
125°C
-6
-4
-2
0
-1 -2 -3 -4 -5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 10. P-Channel Transfer
Characteristics.
-6
1.2
VDS = VGS
1.1 I D = -250µA
1
0.9
0.8
0.7
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDM3000 Rev. E
5 Page 
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC-16 (FS PKG Code S3)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1437
October 1999, Rev. A1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NDM3000.PDF ] | |
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