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PDF PS21313 Data sheet ( Hoja de datos )
| Número de pieza | PS21313 | |
| Descripción | TRANSFER-MOLD TYPE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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PS21313
MITMSUITBSIUSBHISSHEIMSIECMOINCDOUNCDTUOCRTO<RDu<aDl-uIna-lL-Iinn-eLiPnaecPkacgkeaIgneteIlnlitgeellnigtePnotwPeorwMeor dMuoled>ule>
PS21PS32113313
TRATNRSAFNESRF-EMRO-MLDOLTDYPTEYPE
INSIUNLSAUTLEADTETDYPTEYPE
INTEGRATED POWER FUNCTIONS
3rd generation IGBT inverter bridge for 3 phase DC-to-AC
power conversion.
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
• For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage (UV) protection.
Note : Bootstrap supply scheme can be applied.
• For lower-leg IGBTS : Drive circuit, Control circuit under-voltage protection (UV), Short-circuit protection (SC).
• Fault signaling : Corresponding to a SC fault (Low-side IGBT) or a UV fault (Low-side IGBT).
• Input interface : 5V line CMOS/TTL compatible, Schmitt Trigger receiver circuit.
APPLICATION
AC200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES
HEAT SINK SIDE
(3.556)
(3.556)
(1.656)
TERMINAL CODE
(1) TERMINAL
(0.5)
(0.5)
1 VUFS
2 (UPG)
3 VUFB
4 VP1
5 (COM)
PCB
6 UP
(1) PATTERN 7 VVFS
(1)
(0.5)
(1.8MIN)
(1.9) SLIT
8 (VPG)
9 VVFB
(PCB LAYOUT)
10 VP1
(1.778 × 26)
DUMMY PIN
Detail A
11 (COM)
*Note2 12 VP
(1.778)
(6.25) (6.25) (6.25) (8)
(8)
A
(5)
13 VWFS
14 (WPG)
15 VWFB
28 27 26 25 24 23 22 21 20 19 18 16 15 13 12 10 9 8 7 6 5 4
17 14 11
321
(φ2 DEPTH 2)
29
30
Type name , Lot No.
(φ3.3)
16 VP1
17 (COM)
18 WP
19 (UNG)
20 VNO(NC)
21 UN
22 VN
HEAT SINK SIDE
23 WN
(35°)
24 FO
25 CFO
26 CIN
27 VNC
35 34 33 32 31
28 VN1
29 (WNG)
30 (VNG)
(7.62)
(4MIN)
31 P
32 U
(7.62 × 4)
(1.25)
33 V
(41)
(2.5)
34 W
35 N
(42)
(49) *Note1:(***) = Dummy Pin.
*Note 2: In order to increase the surface distance between terminals, cut a slit, etc. on the PCB surface
when mounting a module.
* Note: The values used in the above figure are tentative.
Aug. 1999
1 page  
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21313
TRANSFER-MOLD TYPE
INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Mounting torque
Weight
Heat-sink flatness
Condition
Mounting screw : M3
Recommended 8kg·cm
Recommended 0.78N·m
(Note 5)
RECOMMENDED OPERATION CONDITIONS
Symbol
Parameter
Condition
VCC Supply voltage
VD Control supply voltage
VDB Control supply voltage
∆VD, ∆VDB Control supply variation
tdead
Arm shoot-through blocking time
fPWM
PWM input frequency
VCIN(ON) Input ON voltage
VCIN(OFF) Input OFF voltage
Applied between P-N
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
For each input signal
Tj ≤ 125°C, Tf ≤ 100°C
Applied between UP, VP, WP-VNC
Applied between UN, VN, WN-VNC
Limits
Unit
Min. Typ. Max.
— 8 — kg·cm
— 0.78 — N·m
— 20 — g
–50 — 100 µm
Limits
Min. Typ. Max.
0 300 400
13.5 15.0 16.5
13.5 15.0 16.5
–1 — 1.0
3 ——
— 15 —
0~0.65
4.0~5.5
Unit
V
V
V
V/µs
µs
kHz
V
V
Note 5:
+–
Heat-sink
Measurement Range
DIP-IPM
3mm
–
+
Heat-sink
Aug. 1999
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PS21313.PDF ] | |
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