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PDF PNZ313 Data sheet ( Hoja de datos )
| Número de pieza | PNZ313 | |
| Descripción | PIN Photodiode | |
| Fabricantes | Panasonic Semiconductor | |
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PIN Photodiodes
PNZ313B
PIN Photodiode
For optical control systems
Features
Fast response which is well suited to high speed modulated light
detection : tr, tf = 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes : λP = 960 nm (typ.)
Wide detection area, wide acceptance half angle : θ = 65 deg. (typ.)
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
VR 30
PD 100
Topr –30 to +85
Tstg – 40 to +100
Unit
V
mW
˚C
˚C
7.0±0.5
Unit : mm
Anode mark ø1.6
Device
center
2-1.2±0.15
2-0.6±0.15
0.41±0.15
21
5.08±0.25
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Photo current
Peak sensitivity wavelength
Response time
Response time
Capacitance between pins
Acceptance half angle
ID
IL
λP
tr, tf*2
tr, tf*2
Ct
θ
VR = 10V
VR = 10V, L = 1000 lx*1
VR = 10V
VR = 10V, RL = 1kΩ
VR = 10V, RL = 100kΩ
VR = 0V, f = 1MHz
Measured from the optical axis to the half power point
15
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
5
25
960
50
5
70
65
max
50
Unit
nA
µA
nm
ns
µs
pF
deg.
λP = 800nm
Sig.IN
50Ω
VR = 10V
(Input pulse)
Sig.OUT
(Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PNZ313.PDF ] | |
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