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PDF NTE478 Data sheet ( Hoja de datos )
| Número de pieza | NTE478 | |
| Descripción | Silicon NPN Transistor RF Power Output / PO = 100W @ 175MHz | |
| Fabricantes | NTE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NTE478 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE478
Silicon NPN Transistor
RF Power Output, PO = 100W @ 175MHz
Description:
The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF commu-
nications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating
conditions, and is internally input matched to optimize power gain and efficiency over the band.
Features:
D Designed for VHF Military and Commercial Equipment
D 100W Min with Greater than 6.0dB Gain
D Withstands Infinite VSWR under Operating Conditions
D Low Intermodulation Distortion (–32dB)
D Diffused Emitter Resistors
Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C/W
Electrical Characteristic: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
V(BR)CEO IC = 100mA, IB = 0, Note 1
V(BR)CES IC = 100mA, VBE = 0, Note 1
V(BR)EBO IE = 10mA, iC = 0
ICBO VCB = 12V, IE = 0
hFE VCE = 6V, IC = 5A
Min Typ Max Unit
18 – – V
36 – – V
4 ––V
– – 10 mA
10 –
–
Note 1. Pulsed through 25mH indicator.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE478.PDF ] | |
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