|
|
PDF NTE472 Data sheet ( Hoja de datos )
| Número de pieza | NTE472 | |
| Descripción | Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz | |
| Fabricantes | NTE | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTE472 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
NTE472
Silicon NPN Transistor
RF Power Output
PO = 1.8W @ 175MHz
Description:
The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator ap-
plications in military, mobile marine and citizens band equipment. Suitable for use as output driver
or pre–driver stages in VHF and UHF equipment.
Features:
D Specified 12.5 Volt, 175MHz Characteristics:
Output Power = 1.75 Watts
Minimum Gain = 11.5dB
Efficiency = 50%
D Characterized through 225MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33A
Total Device Dissipation (TC = +75°C , Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W
Derate Above 75°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as a class B or C RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 25mA, IB = 0
V(BR)CES IC = 25mA, VBE = 0
Emitter–Base Breakdown Voltage
V(BR)EBO IC = 0.5mA, IC = 0
Collector Cutoff Current
ICEO VCE = 10V, IB = 0
Min Typ Max Unit
16 – – V
36 – – V
3.5 – – V
– – 0.3 mA
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE472.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTE47 | Silicon NPN Transistor High Gain / Low Noise Amp | NTE |
| NTE470 | Silicon NPN Transistor RF Power Output | NTE |
| NTE471 | Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz | NTE |
| NTE472 | Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz | NTE |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |