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PDF NTE384 Data sheet ( Hoja de datos )
| Número de pieza | NTE384 | |
| Descripción | Silicon NPN Transistor High Voltage Power Amp/Switch | |
| Fabricantes | NTE | |
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NTE384
Silicon NPN Transistor
High Voltage Power Amp/Switch
Description:
The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a
multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere character-
istic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform cur-
rent flow throughout the structure, which produces a high IS/b and a large safe–operation–area.
The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line.
The leakage current is specified at 450V; therefore the device can also be used in a series bridge
configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in
inverter applications.
Features:
D Maximum Safe–Area–of–Operation
D Low Saturation Voltages
D High Voltage Rating: VCER(sus) = 375V
D High Dissipation Rating: PT = 45W
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V
Collector–Emitter Sustaining Voltage
With Base Open, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
With Reverse Bias (VBE) of –1.5V, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V
With External Base–Emitter Resistance (RBE) ≤ 50Ω, VCER(sus) . . . . . . . . . . . . . . . . . . . 375V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Transistor Dissipation (TC ≤ +25°C, VCE ≤ 40V), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), TL . . . . . . . +230°C
Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), RΘJC . . . . . . . . . . . . . . . . . 3.9°C/W
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE384.PDF ] | |
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