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Número de pieza | MMT05B230T3 | |
Descripción | Thyristor Surge Protectors | |
Fabricantes | ON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MMT05B230T3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MMT05B230T3,
MMT05B260T3,
MMT05B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
• High Surge Current Capability: 50 Amps 10 x 1000 µsec, for
Controlled Temperature Environments
• The MMT05B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
• Surface Mount Technology (SMT)
• Indicates UL Registered − File #E210057
• Device Marking: MMT05B230T3: RPBF; MMT05B260T3: RPBG;
MMT05B310T3: RPBJ, and Date Code
http://onsemi.com
BIDIRECTIONAL TSPD (
50 AMP SURGE
265 thru 365 VOLTS
)
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
MARKING DIAGRAMS
YWW
RPBx
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Off−State Voltage − Maximum
MMT05B230T3
MMT05B260T3
MMT05B310T3
VDM
"170
"200
"270
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1. and 2.)
(−25°C Initial Temperature)
8 x 20 µsec
10 x 160 µsec
10 x 560 µsec
10 x 1000 µsec
IPPS1
IPPS2
IPPS3
IPPS4
Maximum Non−Repetitive Rate of
Change of On−State Current
Double Exponential Waveform,
R = 1.0, L = 1.5 µH, C = 1.67 µF,
Ipk = 110A
di/dt
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
"150
"100
"70
"50
"150
Unit
Volts
A(pk)
A/µs
RPBx
x
Y
WW
= Specific Device Code
= F, G or J
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
MMT05B230T3 SMB
12mm Tape and Reel
(2.5K/Reel)
MMT05B260T3 SMB
12mm Tape and Reel
(2.5K/Reel)
MMT05B310T3
SMB
12mm Tape and Reel
(2.5K/Reel)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 7
1
Publication Order Number:
MMT05B230T3/D
1 page MMT05B230T3, MMT05B260T3, MMT05B310T3
TIP
OUTSIDE
PLANT
RING
GND TELECOM
EQUIPMENT
PPTC*
TIP
OUTSIDE
PLANT
GND TELECOM
EQUIPMENT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
OUTSIDE
PLANT
RING
HEAT COIL
GND
TELECOM
EQUIPMENT
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MMT05B230T3.PDF ] |
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