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PDF MMFT3055VL Data sheet ( Hoja de datos )
| Número de pieza | MMFT3055VL | |
| Descripción | TMOS POWER FET 1.5 AMPERES 60 VOLT | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT3055VL/D
™Designer's Data Sheet
TMOS V™
SOT-223 for Surface Mount
MMFT3055VL
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resis-
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E–FET Predecessors
G
TM
D
S
TMOS POWER FET
1.5 AMPERES
60 VOLTS
RDS(on) = 0.140 OHM
1
2
3
4
CASE 318E–04, Style 3
TO–261AA
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
• Available in 12 mm Tape & Reel
Use MMFT3055VLT1 to order the 7 inch/1000 unit reel
Use MMFT3055VLT3 to order the 13 inch/4000 unit reel
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage – Continuous
Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms)
Drain Current – Continuous
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp ≤ 10 µs)
Total PD @ TA = 25°C mounted on 1” sq. Drain pad on FR–4 bd material
Total PD @ TA = 25°C mounted on 0.70” sq. Drain pad on FR–4 bd material
Total PD @ TA = 25°C mounted on min. Drain pad on FR–4 bd material
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 15
± 20
1.5
1.2
5.0
2.1
1.7
0.94
6.3
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
mW/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 3.4 Apk, L = 10 mH, RG = 25 Ω )
Thermal Resistance
– Junction to Ambient on 1” sq. Drain pad on FR–4 bd material
– Junction to Ambient on 0.70” sq. Drain pad on FR–4 bd material
– Junction to Ambient on min. Drain pad on FR–4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TJ, Tstg
EAS
– 55 to 175
58
RθJA
RθJA
RθJA
TL
70
88
159
260
°C
mJ
°C/W
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s, and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 1
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1
1 page  
10 30
9 QT
8
27
24
7 VGS 21
6 18
5 15
4 Q1
3
Q2
12
9
2 ID = 1.5 A 6
1 Q3
VDS TJ = 25°C 3
00
1
2
3
4
5
6
7
8
0
9 10
QT, TOTAL CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
1000
VDD = 30 V
ID = 1.5 A
VGS = 5 V
TJ = 25°C
100
td(off)
tf
10
tr
td(on)
MMFT3055VL
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
1.6
VGS = 0 V
1.4 TJ = 25°C
1.2
1
0.8
0.6
0.4
0.2
0
0.6 0.625 0.65 0.675 0.7 0.725 0.75 0.775 0.8 0.825 0.85
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10 µs. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(RθJC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 13). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
Motorola TMOS Power MOSFET Transistor Device Data
5
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