PDF MMFT2955E Data sheet ( Hoja de datos )

Número de pieza	MMFT2955E
Descripción	TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2955E/D Medium Power Field Effect Transistor P–Channel Enhancement Mode tSilicon Gate TMOS E–FET SOT–223 for Surface Mount MMFT2955E Motorola Preferred Device This advanced E–FET is a TMOS medium power MOSFET designed to withstand high energy in the avalanche and commuta- tion modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • Silicon Gate for Fast Switching Speeds • Low RDS(on) — 0.3 Ω max • The SOT–223 Package can be Soldered Using Wave or Re- flow. The Formed Leads Absorb Thermal Stress During Sol- dering, Eliminating the Possibility of Damage to the Die • Available in 12 mm Tape and Reel Use MMFT2955ET1 to order the 7 inch/1000 unit reel. Use MMFT2955ET3 to order the 13 inch/4000 unit reel. G TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS(on) = 0.3 OHM ® D S 1 2 3 4 CASE 318E–04, STYLE 3 TO–261AA MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C VDS VGS ID IDM PD(1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 V, VGS = 10 V, Peak IL= 1.2 A, L = 0.2 mH, RG = 25 Ω) TJ, Tstg EAS DEVICE MARKING 2955 THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (surface mounted) Maximum Temperature for Soldering Purposes, Time in Solder Bath RθJA TL (1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint. Value 60 ±15 1.2 4.8 0.8 6.4 – 65 to 150 108 156 260 10 TMOS is a registered trademark of Motorola, Inc. E–FET is a trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company Unit Vdc Adc Watts mW/°C °C mJ °C/W °C Sec Preferred devices are Motorola recommended choices for future use and best overall value. REV 4 ©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data 1 1 page 15 V VGS 0 90% IS 10% IFM dlS/dt trr ton IRM tfrr VDS(pk) VR 0.25 IRM VDS Vf VdsL MAX. CSOA STRESS AREA Figure 9. Commutating Waveforms MMFT2955E 6 dIS/dt ≤ 400 A/µs 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 10. Commutating Safe Operating Area (CSOA) RGS DUT – VR + VGS IFM + 20 V – IS VDS Li VR = 80% OF RATED VDSS VdsL = Vf + Li ⋅ dlS/dt Figure 11. Commutating Safe Operating Area Test Circuit VDS t RG L IL VDD Figure 12. Unclamped Inductive Switching Test Circuit BVDSS IL(t) VDD tP t, (TIME) Figure 13. Unclamped Inductive Switching Waveforms Motorola TMOS Power MOSFET Transistor Device Data 5 5 Page

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