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PDF MMDT4124 Data sheet ( Hoja de datos )
| Número de pieza | MMDT4124 | |
| Descripción | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
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MMDT4124
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMDT4126)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 5 and 6)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C2 B1 E1
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
(Note 1)
E2 B2 C1
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
Value
30
25
5.0
200
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
(Notes 1 & 2)
(Note 1)
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
30
25
5.0
⎯
⎯
hFE
VCE(SAT)
VBE(SAT)
120
60
⎯
⎯
Cobo
Cibo
hfe
fT
NF
⎯
⎯
120
300
⎯
Max
⎯
⎯
⎯
50
50
360
⎯
0.30
0.95
4.0
8.0
480
⎯
5.0
Unit Test Condition
V IC = 10μA, IE = 0
V IC = 1.0mA, IB = 0
V IE = 10μA, IC = 0
nA VCB = 20V, IE = 0V
nA VEB = 3.0V, IC = 0V
⎯
IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
V IC = 50mA, IB = 5.0mA
V IC = 50mA, IB = 5.0mA
pF
pF
⎯
MHz
dB
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 1.0V, IC = 2.0mA, f = 1.0kHz
VCE = 20V, IC = 10mA, f = 100MHz
VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMDT4124
Document number: DS30164 Rev. 10 - 2
1 of 3
www.diodes.com
January 2009
© Diodes Incorporated
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