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PDF MMDFS3P303-D Data sheet ( Hoja de datos )
| Número de pieza | MMDFS3P303-D | |
| Descripción | Power MOSFET 3 Amps / 30 Volts | |
| Fabricantes | ON | |
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MMDFS3P303
Power MOSFET
3 Amps, 30 Volts
P–Channel SO–8, FETKYt
The FETKY product family incorporates low RDS(on), MOSFETs
packaged with industry leading, low forward drop, low leakage
Schottky Barrier rectifiers to offer high efficiency components in a
space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications
such as Buck Converter, Buck–Boost, Synchronous Rectification,
Low Voltage Motor Control, and Load Management in Battery Packs,
Chargers, Cell Phones and other Portable Products.
• Power MOSFET with Low VF, Low IR Schottky Rectifier
• Lower Component Placement and Inventory Costs along with
Board Space Savings
• R2 Suffix for Tape and Reel (2500 units/13″ reel)
• Mounting Information for SO–8 Package Provided
• IDSS Specified at Elevated Temperature
• Applications Information Provided
• Marking: 3P303
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
(Notes 1. & 2.)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MW)
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp v 10 ms)
Total Power Dissipation @ TA = 25°C
(Note 3.)
Symbol
VDSS
VDGR
VGS
Value
30
30
"20
Unit
Vdc
Vdc
Vdc
ID 3.5 Adc
ID 2.25
IDM 12 Apk
PD 2.0 Watts
Single Pulse Drain–to–Source Avalanche
Energy – STARTING TJ = 25°C
VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc,
IL = 9.0 Apk, L = 10 mH, RG = 25 W
EAS
375 mJ
1. Negative sign for P–channel device omitted for clarity.
2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
http://onsemi.com
3 AMPERES
30 VOLTS
RDS(on) = 100 mW
VF = 0.42 Volts
P–Channel
D
G
S
MARKING
DIAGRAM
SO–8
8 CASE 751
STYLE 18
1
6N303
LYWW
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
Anode
Anode
Source
Gate
18
27
36
45
Top View
Cathode
Cathode
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMDFS3P303R2 SO–8 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
MMDFS3P303/D
1 page  
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1200 VDS = 0 VGS = 0
1000 Ciss
TJ = 25°C
12
10
25
QT
20
800
600 Crss
400
Ciss
Coss
200
Crss
0
-10 -ā5.0 0 5.0 10 15 20 25 30
VGS VDS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
8.0
6.0 Q1
4.0
Q2
VGS 15
10
ID = 3.5 A
2.0 Q3
TJ = 25°C 5.0
0 VDS 0
0 2.0 4.0 6.0 8.0 10 12 14
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
1000
VGS = 10 V
TJ = 25°C
ID = 2.0 A
VDD = 15 V
100
td(off)
tf
tr
10 td(on)
2.5
VGS = 0 V
2.0 TJ = 25°C
1.5
1.0
0.5
1.0
1.0
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
VGS = 12 V
SINGLE PULSE
TA = 25°C
10
1.0 ms
10 ms
1.0 dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
450
400 ID = 3.5 A
350
300
250
200
150
100
50
0
25
50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
5
5 Page 
MMDFS3P303
PACKAGE DIMENSIONS
SO–8
CASE 751–07
ISSUE V
–X–
A
B
–Y–
–Z–
H
85
S 0.25 (0.010) M Y M
1
4
K
G
D
C
SEATING
PLANE
N X 45 _
0.10 (0.004)
M
0.25 (0.010) M Z Y S X S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC
0.050 BSC
H 0.10 0.25 0.004 0.010
J J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0_ 8_ 0_ 8_
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
XXXXXX
ALYW
STYLE 18:
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MMDFS3P303-D.PDF ] | |
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