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PDF MMDF3200Z Data sheet ( Hoja de datos )
| Número de pieza | MMDF3200Z | |
| Descripción | DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3200Z/D
Product Preview
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistors
™
WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET™
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Zener Protected Gates Provide Electrostatic
Discharge Protection
• Designed to withstand 200 V Machine Model
and 2000 V Human Body Model
• Low RDS(on) Provides Higher Efficiency and
Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by
Logic ICs
• Miniature SO–8 Surface Mount Package —
Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
7 8 N1–DRAIN
N1–GATE
2
1
N1–SOURCE
5 6 N2–DRAIN
MMDF3200Z
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
11.5 AMPERES
20 VOLTS
RDS(on) = 0.015 OHM
CASE 751–06, Style 11
SO–8
N1–Source
N1–Gate
N2–Source
N2–Gate
18
27
36
45
TOP VIEW
N1–Drain
N1–Drain
N2–Drain
N2–Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Operating and Storage Temperature Range
N2–GATE
4
3
N2–SOURCE
Symbol
VDSS
VDGR
VGS
TJ, Tstg
Max
20
20
± 12
– 55 to 150
Unit
V
V
V
°C
DEVICE MARKING
ORDERING INFORMATION
D3200
Device
MMDF3200Z
Reel Size
13″
Tape Width
12 mm embossed tape
Quantity
4000 units
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMDF3200Z.PDF ] | |
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