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PDF MMBT4400 Data sheet ( Hoja de datos )
| Número de pieza | MMBT4400 | |
| Descripción | NPN General Purpose Amplifier | |
| Fabricantes | Fairchild | |
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Discrete POWER & Signal
Technologies
2N4400
MMBT4400
C
C
BE
TO-92
SOT-23
Mark: 83
E
B
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 19. See PN2222A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
6.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N4400
625
5.0
83.3
200
*MMBT4400
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
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