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Número de pieza | MMBT4124 | |
Descripción | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
Fabricantes | Diodes Incorporated | |
Logotipo | ||
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No Preview Available ! Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBT4126)
• Ideal for Medium Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 2 and 4)
MMBT4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
BE
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
Value
30
25
5.0
200
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
30
25
5.0
⎯
⎯
hFE
VCE(SAT)
VBE(SAT)
120
60
⎯
⎯
Cobo
Cibo
hfe
fT
⎯
⎯
120
300
Max
⎯
⎯
⎯
50
50
360
⎯
0.30
0.95
4.0
8.0
480
⎯
Unit Test Condition
V IC = 10μA, IE = 0
V IC = 1.0mA, IB = 0
V IE = 10μA, IC = 0
nA VCB = 20V, IE = 0V
nA VEB = 3.0V, IC = 0V
⎯
IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
V IC = 50mA, IB = 5.0mA
V IC = 50mA, IB = 5.0mA
pF
pF
⎯
MHz
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBT4124
Document number: DS30105 Rev. 11 - 2
1 of 3
www.diodes.com
January 2009
© Diodes Incorporated
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MMBT4124.PDF ] |
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