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PDF MMBF4392LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBF4392LT1 | |
| Descripción | JFET Switching Transistors | |
| Fabricantes | ON | |
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MMBF4391LT1,
MMBF4392LT1,
MMBF4393LT1
JFET Switching Transistors
N−Channel
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
VDS 30 Vdc
Drain−Gate Voltage
VDG
30 Vdc
Gate−Source Voltage
VGS
30 Vdc
Forward Gate Current
IG(f) 50 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
PD
(Note 1) TA = 25°C
225 mW
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23
CASE 318
STYLE 10
MARKING DIAGRAM
6x M G
G
1
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
6x = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBF4391LT1/D
1 page  
MMBF4391LT1, MMBF4392LT1, MMBF4393LT1
100
90
Tchannel = 25°C
10
9.0
80 8.0
70 rDS(on) @ VGS = 0
60
7.0
6.0
50
VGS(off)
5.0
40 4.0
30 3.0
20 2.0
10 1.0
00
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IDSS, ZERO−GATE VOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of IDSS on Drain−Source
Resistance and Gate−Source Voltage
NOTE 2
The Zero−Gate−Voltage Drain Current (IDSS) is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (VGS(off)) and Drain−Source On Resistance
(rDS(on)) to IDSS. Most of the devices will be within
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an IDSS range of 25 to 75 mA. Figure
10 shows rDS(on) = 52 W for IDSS = 25 mA and 30 W for
IDSS = 75 mA. The corresponding VGS values are 2.2 V
and 4.8 V.
http://onsemi.com
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