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PDF MM908E624 Data sheet ( Hoja de datos )
| Número de pieza | MM908E624 | |
| Descripción | TRIPLE HIGH-SIDE SWITCH WITH EMBEDDED MCU AND LIN | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
Integrated Triple High-Side
Switch with Embedded MCU
and LIN Serial Communication
for Relay Drivers
The 908E624 is an integrated single-package solution that
includes a high-performance HC08 microcontroller with a
SMARTMOSTM analog control IC. The HC08 includes flash memory,
a timer, enhanced serial communications interface (ESCI), an
analog-to-digital converter (ADC), serial peripheral interface (SPI)
(only internal), and an internal clock generator module. The analog
control die provides three high-side outputs with diagnostic functions,
voltage regulator, watchdog, operational amplifier, and local
interconnect network (LIN) physical layer.
The single-package solution, together with LIN, provides optimal
application performance adjustments and space-saving PCB design.
It is well suited for the control of automotive high-current motors
applications using relays (e.g., window lifts, fans, and sun roofs).
Features
• High-Performance M68HC908EY16 Core
• 16 K Bytes of On-Chip Flash Memory
• 512 Bytes of RAM
• Internal Clock Generator Module
• Two 16-Bit, 2-Channel Timers
• 10-Bit Analog-to-Digital Converter (ADC)
• LIN Physical Layer Interface
• Low Dropout Voltage Regulator
• Three High-Side Outputs
• Two Wake-Up Inputs
• 16 Microcontroller I/Os
MM908E624
Internal Rev 4.0, 12/2004
908E624
TRIPLE HIGH-SIDE SWITCH WITH
EMBEDDED MCU AND LIN
DW SUFFIX
98ASA99294D
54-TERMINAL SOICW
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MM908E624ACDWB/R -40°C to 85°C 54 SOICW
VBAT
LIN
Interface
+5.0 V
Microcontroller
Ports
LIN
VREFH
VDDA
EVDD
VCC
VDD
VSUP1
VREFL
VSSA
EVSS
AGND
GND
RxD
PTE1/RxD
RSTB
RSTB_A
IRQB
IRQB_A
PTD0/TACH0
PWMin
PTA0−4
PTB1;3−7
PTC2−4
PTD1/TACH1
VSUP2 HS3
L1
L2
HS1
HS2
+E
OUT
-E
WDCONF
M
To Microcontroller A/D Channel
Figure 1. 908E624 Simplified Application Diagram
This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
1 page  
Maximum Ratings
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding limits on any terminal may cause permanent
damage to the device.
Electrical Ratings
Rating
Symbol
Value
Unit
Supply Voltage
Analog Chip Supply Voltage under Normal Operation (Steady-State)
Analog Chip Supply Voltage under Transient Conditions
MCU Chip Supply Voltage
Input Terminal Voltage
Analog Chip
Microcontroller Chip
VSUP(SS)
VSUP(PK)
VDD
VIN (ANALOG)
VIN (MCU)
-0.3 to 27
-0.3 to 40
-0.3 to 5.5
-0.3 to VDD+0.3
VSS-0.3 to VDD+0.3
V
V
Maximum Microcontroller Current per Terminal
All Terminals except VDD, VSS, PTA0:PTA6, PTC0:PTC1
PTA0:PTA6, PTC0:PTC1 Terminals
IPIN(1)
IPIN(2)
mA
±15
± 25
Maximum Microcontroller VSS Output Current
Maximum Microcontroller VDD Input Current
Current Sense Amplifier
Maximum Input Voltage, +E, -E Terminals
Maximum Input Current, +E, -E Terminals
Maximum Output Voltage, OUT Terminal
Maximum Output Current, OUT Terminal
IMVSS
IMVDD
V + E-E
I + E-E
VOUT
IOUT
100
100
-0.3 to 7.0
± 20
-0.3 to VCC+0.3
± 20
mA
mA
V
mA
V
mA
LIN Supply Voltage
Normal Operation (Steady-State)
Transient Input Voltage (per ISO7637 Specification) and with
External Components (Figure 4, page 15)
VBUS(SS)
VBUS(PK)
-18 to 40
-150 to 100
V
L1 and L2 Terminal Voltage
Normal Operation with a 33 kΩ resistor (Steady-State)
Transient Input Voltage (per ISO7637 Specification) and with
External Components (Figure 4, page 15)
VWAKE(SS)
VWAKE(PK)
-18 to 40
-100 to 100
V
ESD Voltage
Human Body Model (1)
Machine Model (2)
Charge Device Model (3)
VESD1
VESD2
VESD3
± 2000
±100
± 500
V
Notes
1. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω).
2. ESD2 testing is performed in accordance with the Machine Model (CZAP =200 pF, RZAP = 0 Ω).
3. ESD3 testing is performed in accordance with Charge Device Model, Robotic (CZAP = 4.0 pF).
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E624
5
5 Page 
Static Electrical Characteristics
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
Sense Current Amplifier
Rail to Rail Input Voltage
Output Voltage Range
Output Current ±1.0 mA
Output Current ±5.0 mA
Input Bias Current
Input Offset Current
Input Offset Voltage
Supply Voltage Rejection Ratio (20)
Common Mode Rejection Ratio (20)
Gain Bandwidth (20)
VIMC
VOUT1
VOUT2
IB
IO
VIO
SVR
CMR
GBP
- 0.1
0.1
0.3
—
-100
- 25
60
70
1.0
—
VCC + 0.1
V
V
— VCC-0.1
— VCC-0.3
— 250 nA
— 100 nA
— 25 mV
— — dB
— — dB
— — MHz
Slew Rate
Phase Margin (for Gain = 1, Load 100 pF/ /5.0 kΩ (20)
SR
PHMO
0.5
40
—
—
— V/µs
—°
Open Loop Gain
OLG
— 85 — dB
L1 and L2 Inputs
Negative Switching Threshold
5.5 V < VSUP < 6.0 V
6.0 V < VSUP < 18 V
18 V < VSUP < 27 V
VTHN
V
2.0 2.5 3.0
2.5 3.0 3.5
2.7 3.2 3.7
Positive Switching Threshold
5.5 V < VSUP < 6.0 V
6.0 V < VSUP < 18 V
18 V < VSUP < 27 V
VTHP
V
2.7 3.3 3.8
3.0 4.0 4.5
3.5 4.2 4.7
Hysteresis
5.5 V < VSUP < 27 V
VHYST
V
0.5 — 1.3
Input Current
-0.2 V < VIN < 40 V
IIN µA
-10 —
10
Notes
20. This parameter is guaranteed by process monitoring but is not production tested.
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E624
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MM908E624.PDF ] | |
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