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PDF MJH11020 Data sheet ( Hoja de datos )
| Número de pieza | MJH11020 | |
| Descripción | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 / 200 / 250 VOLTS 150 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Darlington
Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
VCEO(sus) = 200 Vdc (Min) — MJH11020, 19
VCEO(sus) = 250 Vdc (Min) — MJH11022, 21
• Low Collector–Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCE(sat) = 1.8 V (Typ) @ IC = 10 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Monolithic Construction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
Symbol
VCEO
VCB
VEB
IC
11018
11017
150
150
MJH
11020
11019
200
200
5.0
15
30
11022
11021
250
250
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate Above 25_C
IB
PD
0.5
150
1.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance. Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
Max
0.83
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MJH11017/D
MJH10012
(See MJ10012)
PNP
MJH11017*
MJH11019*
MJH11021*
NPN
MJH11018*
MJH11020*
MJH11022*
*Motorola Preferred Device
15 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150, 200, 250 VOLTS
150 WATTS
CASE 340D–01
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
MJH11017
MJH11019
MJH11021
BASE
MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022
PNP
NPN
COLLECTOR
MJH11018
MJH11020
MJH11022
COLLECTOR
BASE
EMITTER
Figure 9. Darlington Schematic
EMITTER
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJH11020.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MJH11020 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 / 200 / 250 VOLTS 150 WATTS | Motorola Semiconductors |
| MJH11020 | Complementary Darlington Silicon Power Transistors |  ON |
| MJH11020 | Silicon NPN Power Transistor |  Inchange Semiconductor |
| MJH11020 | Trans Darlington NPN 200V 15A 3-Pin(3+Tab) SOT-93 Rail |  New Jersey Semiconductor |
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