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PDF MJE5851 Data sheet ( Hoja de datos )
| Número de pieza | MJE5851 | |
| Descripción | 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5850/D
MJE5850
™Designer's Data Sheet
SWITCHMODE Series
MJE5851*
MJE5852*
PNP Silicon Power Transistors
*Motorola Preferred Device
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-
age, high–speed, power switching in inductive circuits where fall time is critical. They
are particularly suited for line operated switchmode applications such as:
8 AMPERE
PNP SILICON
POWER TRANSISTORS
300, 350, 400 VOLTS
• Switching Regulators
• Inverters
80 WATTS
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
100 ns Inductive Fall Time @ 25_C (Typ)
125 ns Inductive Crossover Time @ 25°C (Typ)
Operating Temperature Range –65 to + 150_C
100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSaturation Voltages
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Symbol
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
PD
MJE5850
300
350
TJ, Tstg
Symbol
RθJC
TL
CASE 221A–06
TO–220AB
MJE5851
350
400
6.0
8.0
16
4.0
8.0
80
0.640
– 65 to 150
MJE5852
400
450
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max Unit
1.25 _C/W
275 _C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
SWITCHING TIMES NOTE
MJE5850 MJE5851 MJE5852
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10 – 90% VCEM
tfi = Current Fall Time, 90 – 10% ICM
tti = Current Tail, 10 – 2% ICM
tc = Crossover Time,10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform is
shown in Figure 7 to aid on the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222A:
]PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
VCC = 250 V
IC/IB = 4
TJ = 25°C
tr
td
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn–On Switching Times
10
0.7
0.4
0.3
0.2
0.1
0.1
ts
VCC = 250 V
IC/IB = 4
VBE(off) = 5 V
TJ = 25°C
tf
0.3 0.5 0.7 1.0 2.0 4.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Turn–Off Switching Time
1
0.7
D = 0.5
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.02 0.05 0.1 0.2
0.5 1
ZθJC(t) = r(t) RθJC
RθJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
2 5 10 20
t, TIME (ms)
50
Figure 11. Typical Thermal Response [ZθJC(t)]
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100 200
500 1 k
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MJE5851.PDF ] | |
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