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Número de pieza | MJE5731 | |
Descripción | POWER TRANSISTORS PNP SILICON | |
Fabricantes | ON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MJE5731 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage PNP Silicon Power
Transistors
. . . designed for line operated audio output amplifier, SWITCHMODE power supply
drivers and other switching applications.
• 300 V to 400 V (Min) — VCEO(sus)
• 1.0 A Rated Collector Current
• Popular TO–220 Plastic Package
• PNP Complements to the TIP47 thru TIP50 Series
Order this document
by MJE5730/D
MJE5730
MJE5731
MJE5731A
1.0 AMPERE
POWER TRANSISTORS
PNP SILICON
300 – 350 – 400 VOLTS
40 WATTS
CASE 221A–06
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorCurrent — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Derate above 25_C
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TA = 25_C
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inducting Load Energy (See Figure 10)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
TO–220AB
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
E
TJ, Tstg
MJE5730
300
300
MJE5731
350
350
5.0
1.0
3.0
1.0
MJE5731A
375
375
40
0.32
2.0
0.016
20
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
Watts
W/_C
mJ
_C
Symbol
RθJC
RθJA
Max
3.125
62.5
Unit
_C/W
_C/W
REV 1
©MMoototorroollaa, IBncip. 1o9la97r Power Transistor Device Data
1
1 page PACKAGE DIMENSIONS
MJE5730 MJE5731 MJE5731A
Q
H
Z
B
4
1 23
F
T
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Motorola Bipolar Power Transistor Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MJE5731.PDF ] |
Número de pieza | Descripción | Fabricantes |
MJE5730 | 1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS | Motorola Semiconductors |
MJE5730 | POWER TRANSISTORS PNP SILICON | ON |
MJE5731 | 1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS | Motorola Semiconductors |
MJE5731 | POWER TRANSISTORS PNP SILICON | ON |
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