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PDF MJE2360T Data sheet ( Hoja de datos )
| Número de pieza | MJE2360T | |
| Descripción | NPN Silicon High Voltage Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon High-Voltage
Transistor
. . . useful for general–purpose, high voltage applications requiring high fT.
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc
• DC Current Gain —
hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T
• Current–Gain–Bandwidth Product —
fT = 10 MHz (Typ) @ IC = 50 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Value
350
375
6.0
0.5
0.25
30
0.24
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
θJC
Max
4.167
Unit
_C/W
40
35
30
25
20
15
10
5.0
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power–Temperature Derating Curve
MJE2360T
MJE2361T
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
350 VOLTS
30 WATTS
CASE 221A–06
TO–220AB
REV 1
3–626
Motorola Bipolar Power Transistor Device Data
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJE2360T.PDF ] | |
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