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PDF MJE18604 Data sheet ( Hoja de datos )
| Número de pieza | MJE18604 | |
| Descripción | POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18604D2/D
MJE18604D2
Advance Information
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
POWER TRANSISTORS
3 AMPERES
1600 VOLTS
100 WATTS
Diode and Built-in Efficient
Antisaturation Network for
1600 V Applications
The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make
it ideally suitable for light ballast applications. Therefore, there is no more a need to
guarantee an hfe window.
Main features:
• Low Base Drive Requirement
• High DC Current Gain (30 Typical) @ IC = 400 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active
Antisaturation (H2BIP) Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode Matched with the Power
Transistor
• Fully Characterized and Guaranteed Dynamic VCE(sat)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage @ R = 200 Ω
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
Base Current — Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Total Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance — Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance — Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle≤10%.
Symbol
VCEO
VCER
VCBO
VCES
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
RθJC
RθJA
TL
CASE 221A–06
TO–220AB
Value
800
800
1600
1600
12
3
8
2
4
100
0.8
– 65 to 150
1.25
62.5
260
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
_C/W
_C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
PACKAGE DIMENSIONS
MJE18604D2
Q
H
Z
B
4
1 23
F
T
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJE18604.PDF ] | |
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