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PDF MJE18204 Data sheet ( Hoja de datos )
| Número de pieza | MJE18204 | |
| Descripción | Power Transistor | |
| Fabricantes | ON | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet
SWITCHMODE™ NPN Bipolar
Power Transistor for Electronic
Light Ballast and Switching
Power Supply Applications
The MJE/MJF18204 have an application specific state–of–the–art die dedicated to
the electronic ballast (“light ballast”) and power supply applications.
• Improved Global Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Fast Turn–Off (No Current Tail)
• Full Characterization at 125_C
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Two Package Choices: Standard TO–220 or Isolated TO–220
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol MJE18204 MJF18204 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Peak (1)
VCEO
VCBO
VCES
VEBO
IC
ICM
600
1200
1200
10
5
10
Vdc
Vdc
Vdc
Vdc
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
IB 2 Adc
IBM 4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(for 1 sec, R.H. ≤ 30%)
TC = 25°C
Per Figure 22
Per Figure 23
Per Figure 24
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Total Device Dissipation @ TC = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Derate above 25_C
VISOL1
VISOL2
VISOL3
PD
75
0.6
4500
3500
1500
35
0.28
Volts
Watt
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol MJE18204 MJF18204 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance — Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Junction to Ambient
RθJC
RθJA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
TL
Purposes: 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
1.65 3.55
62.5 62.5
260
_C/W
_C
(2) Proper strike and creepage distance must be provided.
Order this document
by MJE18204/D
MJE18204
MJF18204
POWER TRANSISTORS
5 AMPERES
1200 VOLTS
35 and 75 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
10000
1000
100
10
1
TYPICAL STATIC CHARACTERISTICS
MJE18204 MJF18204
TJ = 25°C
f(test) = 1 MHz
Cib (pF)
Cob (pF)
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
100
1600
1400
IC/IB = 10
1200
1000
IC/IB = 5
800
600
400
200
0
0.5
TJ = 125°C
TJ = 25°C
IB1 = IB2
VCC = 300 V
PW = 20 µs
1 1.5 2 2.5 3 3.5 4 4.5 5
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Resistive Switching, ton
8
TJ = 125°C
IB1 = IB2
7
TJ = 25°C
VCC = 300 V
PW = 20 µs
6 IC/IB = 5
5
4
3
2 IC/IB = 10
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Resistive Switching, toff
5
6
TJ = 125°C
TJ = 25°C
IB1 = IB2
VCC = 15 V
5 VZ = 300 V
LC = 200 µH
4
IC/IB = 5
3
2
0.5 1
IC/IB = 10
1.5 2
2.5
3
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Inductive Storage Time, tsi
3.5
6
IB1 = IB2
IC = 1 A
VCC = 15 V
VZ = 300 V
LC = 200 µH
5
4
IC = 2 A
3
35
TJ = 125°C
TJ = 25°C
7 9 11
hFE, FORCED GAIN
13
15
Figure 11. Inductive Storage Time, tsi (hFE)
1500
IB1 = IB2
VCC = 15 V
VZ = 300 V
1000 LC = 200 µH
TJ = 125°C
TJ = 25°C
tc
500
0
0
tfi
tc
tfi
12
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Switching,
tc & tfi @ IC/IB = 5
3
Motorola Bipolar Power Transistor Device Data
5
5 Page 
PACKAGE DIMENSIONS
MJE18204 MJF18204
B
Q
H
Z
4
1 23
L
V
G
N
F
–T–
SEATING
PLANE
C
TS
A
U
K
R
J
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
–B–
F
Q
A
123
H
K
–Y–
CASE 221A–06
TO–220AB
ISSUE Y
–T–
SEATING
PLANE
C
S
U
G
N
L
D 3 PL
0.25 (0.010) M B M Y
J
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.621 0.629
B 0.394 0.402
C 0.181 0.189
D 0.026 0.034
F 0.121 0.129
G 0.100 BSC
H 0.123 0.129
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.200 BSC
Q 0.126 0.134
R 0.107 0.111
S 0.096 0.104
U 0.259 0.267
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
MILLIMETERS
MIN MAX
15.78 15.97
10.01 10.21
4.60 4.80
0.67 0.86
3.08 3.27
2.54 BSC
3.13 3.27
0.46 0.64
12.70 14.27
1.14 1.52
5.08 BSC
3.21 3.40
2.72 2.81
2.44 2.64
6.58 6.78
CASE 221D–02
(ISOLATED TO–220 TYPE)
UL RECOGNIZED: FILE #E69369
ISSUE D
Motorola Bipolar Power Transistor Device Data
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MJE18204.PDF ] | |
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