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PDF MJD50 Data sheet ( Hoja de datos )
| Número de pieza | MJD50 | |
| Descripción | NPN SILICON POWER TRANSISTORS 1 AMPERE 250 / 400 VOLTS 15 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MJD50 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Power Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode power supply drivers
and other switching applications.
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“–1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Electrically Similar to Popular TIP47, and TIP50
• 250 and 400 V (Min) — VCEO(sus)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ 1 A Rated Collector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
MJD47 MJD50
250 400
350 500
5
1
2
0.6
15
0.12
1.56
0.0125
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purpose
Symbol
RθJC
RθJA
TL
Max Unit
8.33 _C/W
80 _C/W
260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Min Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1) MJD47 VCEO(sus)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 mAdc, IB = 0)
MJD50
250
400
—
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = 150 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 300 Vdc, IB = 0)
MJD47
MJD50
ICEO
— 0.2
— 0.2
Unit
Vdc
mAdc
* When surface mounted on minimum pad sizes recommended.
v v(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by MJD47/D
MJD47*
MJD50*
*Motorola Preferred Device
NPN SILICON
POWER TRANSISTORS
1 AMPERE
250, 400 VOLTS
15 WATTS
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
inches
mm
1
1 page  
PACKAGE DIMENSIONS
MJD47 MJD50
B
VR
–T–
SEATING
PLANE
C
E
S
F
4
1 23
A
K
J
LH
D 2 PL
G 0.13 (0.005) M T
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G 0.180 BSC
4.58 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC
2.29 BSC
R 0.175 0.215 4.45 5.46
S 0.020 0.050 0.51 1.27
U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27
Z 0.138 ––– 3.51 –––
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369A–13
ISSUE W
B
VR
–T–
SEATING
PLANE
S
4
123
A
K
C
E
F
G
J
D 3 PL
0.13 (0.005) M T
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.235 0.250
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.033 0.040
F 0.037 0.047
G 0.090 BSC
H 0.034 0.040
J 0.018 0.023
K 0.350 0.380
R 0.175 0.215
S 0.050 0.090
V 0.030 0.050
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.84 1.01
0.94 1.19
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.46
1.27 2.28
0.77 1.27
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369–07
ISSUE K
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJD50.PDF ] | |
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