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PDF MCH6613 Data sheet ( Hoja de datos )
| Número de pieza | MCH6613 | |
| Descripción | Ultrahigh-Speed Switching Applications | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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Ordering number : ENN6920
MCH6613
N-Channel and P-Channel Silicon MOSFETs
MCH6613
Ultrahigh-Speed Switching Applications
Features
• The MCH6613 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON-
resistance and high-speed switching, thereby enabling
high-density mounting.
• Excellent ON-resistance characteristic.
• 2.5V drive.
Package Dimensions
unit : mm
2173A
[MCH6613]
0.3
456
0.15
3 21
0.65
2.0
(Bottom view)
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : MCPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
N-channel
P-channel
30 --30
±10 ±10
0.35 --0.2
1.4 --0.8
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FM
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
Ratings
min typ max
Unit
30 V
10 µA
±10 µA
0.4 1.3 V
150 220
mS
2.9 3.7 Ω
3.7 5.2 Ω
6.4 12.8 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-G3I24IM1 No.6920-1/6
1 page  
MCH6613
IF -- VSD
[Nch]
IF -- VSD
[Pch]
1.0 5
7 VGS=0
VGS = 0
53
32
2
--0.1
0.1 7
75
5
3
3
22
0.01
0.5
1000
7
5
3
2
100
7
5
3
2
0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
IT00037
[Nch]
VDD=15V
VGS=4V
td(off)
tf
tr
td(on)
10
0.01
100
7
5
3
2
23
5 7 0.1
Drain Current, ID -- A
Ciss, Coss, Crss -- VDS
2
IT00038
[Nch]
f=1MHz
--0.01
--0.5
1000
7
5
3
2
--0.6 --0.7 --0.8 --0.9 --1.0 --1.1
Diode Forward Voltage, VSD -- V
SW Time -- ID
IT00085
[Pch]
VDD= --15V
VGS= --4V
td(off)
tf
100
7
5 tr
3 td(on)
2
10
--0.01
100
7
5
3
2
23
5 7 --0.1
Drain Current, ID -- A
IT00086
Ciss, Coss, Crss -- VDS [Pch]
f=1MHz
10
Ciss
7
5 Coss
3
2 Crss
1.0
0 2 4 6 8 10 12 14 16
Drain-to-Source Voltage, VDS -- V
10 VGS -- Qg
VDS=10V
9 ID=150mA
8
18 20
IT00039
[Nch]
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00040
10
Ciss
7
Coss
5
3
2 Crss
1.0
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
--10
VDS= --10V
--9 ID= --100mA
IT00087
[Pch]
--8
--7
--6
--5
--4
--3
--2
--1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00088
No.6920-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCH6613.PDF ] | |
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