(PDF) MGFC5213 Datasheet - K-Band 2-Stage Power Amplifier

Número de pieza	MGFC5213
Descripción	K-Band 2-Stage Power Amplifier
Fabricantes	Mitsubishi
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No Preview Available ! PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High Power Amplifier (HPA) . MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGFC5213 K-Band 2-Stage Power Amplifier BLOCK DIAGRAM Vg1 Vg2 Vd1 Vd2 FEATURES RF frequency : 27.5 to 30.0 GHz Linear gain : ≥ 9 dB P1dB : ≥ 29 dBm DC power : Vd = 5 V, Id1 + Id2 = 1080 mA In Vd1 Vg1 Vg2 Vd1 Vd2 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Symbol Vd1, Vd2 Vg1, Vg2 Id1 Id2 Pin Ta Tstg Tmax Parameter Drain supply voltage Gate supply voltage Drain current 1 Drain current 2 RF input power Backside ambient temp. Storage temp. Maximum assembly temp. Ratings 6 -3 ~ 0.5 480 960 25 -20 ~ +70 -65 ~ +175 +300 Out Units V V mA mA dBm ˚C ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) Symbol Parameter Conditions Gain Gain VSWR in Input VSWR VSWR out P1dB Output VSWR Output power at 1 dB compression point Vd = 5 V Id1 = 360 mA Id2 = 720 mA (RF off) f = 27.5, 30.0 GHz Single tone Limits Min. Typ. Max. Units 9.0 dB 3.0 - 3.0 - 29.0 dBm MITSUBISHI ELECTRIC as of July '98 1 page

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