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Número de pieza | MGFC41V5964 | |
Descripción | 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET | |
Fabricantes | Mitsubishi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MGFC41V5964 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V5964
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC41V5964 is an internally impedence matched
GaAs power FET especially designed for use in 5.9 - 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high raliability.
FEATURES
Internally matched to 50ohm system
High output power
P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz
High power gain
GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
Eadd = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
APPLICATION
5.9 - 6.4GHz band amplifiers
OUTLINE DRAWING
Unit: millimeters (inches)
R1.25
R1.2
24+/-0.3
(1)
0. 6+ / -0. 15
(2)
(3)
20.4+/-0.2
13.4
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10V
ID = 3.4 A
Rg = 50(ohm) Refer to Bias Procedure
GF-18
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Tstg
Storage temperature
*1 : Tc=25 DegreesC
Ratings
-15
-15
12
-30
63
53.6
175
-65 to +175
Unit
V
V
A
mA
mA
W
DegreesC
DegreesC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
gm Transconductance
VDS = 3V , ID = 3.0A
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
VDS = 3V , ID = 30mA
VDS = 10V , ID = 3.4A , f = 5.9 - 6.4 GHz
Eadd
Power added efficiency
IM3 *2 3rd order IM distortion
Rth(ch-c) Thermal resistance *1
Delta Vf method
*1 : Channel to case
*2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz
Min
-
-
-
40
8.5
-
-42
-
Limits
Typ
-
3
-
41
9.5
33
-45
-
Max
12
-
-5
-
-
-
-
2.8
Unit
A
S
V
dBm
dB
%
dBc
C/W
MITSUBISHI
ELECTRIC
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MGFC41V5964.PDF ] |
Número de pieza | Descripción | Fabricantes |
MGFC41V5964 | 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET | Mitsubishi |
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