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Número de pieza | MG25Q6ES42 | |
Descripción | Silicon N Channel IGBT GTR Module | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MG25Q6ES42 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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INSULATED GATE BIPOLAR TRANSISTOR
GTR Module
Silicon N Channel IGBT
High Power Switching Applications
Motor Control Applications
Features
• 6 IGBTs are built into 1 package
• High speed:
• Low saturation voltage:
• Enhancement mode
tf = 0.5µs (Max.)
trr = 0.5µs (Max.)
VCE (sat) = 4.0V (Max.)
• The electrodes are isolated from case
Maximum Ratings (Ta = 25°C)
CHARACTERISTICS
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1ms
Forward Current
DC
1ms
Collector Power
Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature Range
Isolation Voltage
Screw Torque
SYMBOL
RATING
VCES
VGES
IC
ICP
IF
IFM
1200
± 20
25
50
25
50
PC 200
Tj
Tstg
VIsol
—
150
-40 ~ 125
2500
(AC 1 Minute)
3
UNIT
V
V
A
A
W
°C
°C
V
N¥m
MG25Q6ES42
Unit in mm
TOSHIBA CORPORATION
PW03810796
1/5
1 page MG25Q6ES42
CHARACTERISTIC
PeakCollector Current (Icp)
Diode surge current (IFSM)
Diode I2t
CONDITION
Tj ≤ 125°C
10ms 1/2 sinewave, Tj ≤ 25°C, Non-repetitive
10ms 1/2 sinewave, Non-repetitive
LIMITS
≤ 75
≤ 155
≥ 120
UNIT
A
A
A2s
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in gen-
eral electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA
products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal,
combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments
without prior consultation with TOSHIBA.
TOSHIBA CORPORATION
PW03810796
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet MG25Q6ES42.PDF ] |
Número de pieza | Descripción | Fabricantes |
MG25Q6ES42 | Silicon N Channel IGBT GTR Module | Toshiba |
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