PDF MGY25N120D Data sheet ( Hoja de datos )

Número de pieza	MGY25N120D
Descripción	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Fabricantes	ON
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120D/D ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifical- ly suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost. • Industry Standard High Power TO–264 Package (TO–3PBL) • High Speed Eoff: 216 mJ/A typical at 125°C • High Short Circuit Capability – 10 ms minimum • Soft Recovery Free Wheeling Diode is included in the package • Robust High Voltage Termination • Robust RBSOA C MGY25N120D Motorola Preferred Device IGBT & DIODE IN TO–264 25 A @ 90°C 38 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED G C E G E CASE 340G–02 STYLE 5 TO–264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C VCES VCGR VGE IC25 IC90 ICM PD 1200 1200 ±20 38 25 76 212 1.69 Vdc Vdc Vdc Adc Apk Watts W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to 150 °C Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) tsc 10 ms Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient RθJC RθJC RθJA 0.6 °C/W 0.9 35 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C Mounting Torque, 6–32 or M3 screw 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 © MMoototororloa,laIncIG. 1B99T7 Device Data 1 1 page 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 MGY25N120D P(pk) t1 t2 DUTY CYCLE, D = t1/t2 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 1.0E–03 1.0E–02 t, TIME (s) 1.0E–01 1.0E+00 Figure 11. Thermal Response 1.0E+01 Motorola IGBT Device Data 5 5 Page

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