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PDF PHN205 Data sheet ( Hoja de datos )
| Número de pieza | PHN205 | |
| Descripción | Dual N-channel enhancement mode MOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PHN205
Dual N-channel enhancement
mode
MOS transistor
Product specification
Supersedes data of 1997 Jun 18
File under Discrete Semiconductors, SC13b
1997 Oct 22
1 page  
Philips Semiconductors
Dual N-channel enhancement mode
MOS transistor
Product specification
PHN205
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per N-channel
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
Ciss
Coss
Crss
QG
QGS
QGD
td(on)
tf
ton
td(off)
tr
toff
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
turn-on delay time
fall time
turn-on switching time
turn-off delay time
rise time
turn-off switching time
VGS = 0; ID = 10 µA
VGS = VDS; ID = 1 mA
VGS = 0; VDS = 24 V
VGS = ±20 V; VDS = 0
VGS = 4.5 V; ID = 1.6 A
VGS = 10 V; ID = 3.2 A
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 10 V; VDD = 15 V; ID = 3.2 A
VGS = 10 V; VDD = 15 V; ID = 3.2 A
VGS = 10 V; VDD = 15 V; ID = 3.2 A
VGS = 0 to 10 V; VDD = 15 V;
ID = 1 A; Rgen = 6 Ω; see Fig.4
VGS = 0 to 10 V; VDD = 15 V;
ID = 1 A; Rgen = 6 Ω; see Fig.4
VGS = 0 to 10 V; VDD = 15 V;
ID = 1 A; Rgen = 6 Ω; see Fig.4
VGS = 10 to 0 V; VDD = 15 V;
ID = 1 A; Rgen = 6 Ω; see Fig.4
VGS = 10 to 0 V; VDD = 15 V;
ID = 1 A; Rgen = 6 Ω; see Fig.4
VGS = 10 to 0 V; VDD = 15 V;
ID = 1 A; Rgen = 6 Ω; see Fig.4
30
1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Source-drain diode
VSD
source-drain diode forward
VGD = 0; IS = 1.25 A
voltage
−
trr
reverse recovery time
IS = 1.25 A; di/dt = −100 A/µs
−
−−V
− 2.8 V
− 100 nA
− ±100 nA
− 0.1 Ω
− 0.05 Ω
450 −
pF
200 −
pF
100 −
pF
15 −
nC
1 − nC
5 − nC
7 − ns
8 − ns
15 −
ns
20 −
ns
12 −
ns
32 −
ns
−1
45 −
V
ns
1997 Oct 22
5
5 Page 
Philips Semiconductors
Dual N-channel enhancement mode
MOS transistor
NOTES
Product specification
PHN205
1997 Oct 22
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PHN205.PDF ] | |
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