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PDF PHN1013 Data sheet ( Hoja de datos )
| Número de pieza | PHN1013 | |
| Descripción | N-channel enhancement mode MOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PHN1013
N-channel enhancement mode
MOS transistor
Objective specification
File under Discrete Semiconductors, SC13b
1997 Jun 20
1 page  
Philips Semiconductors
N-channel enhancement mode
MOS transistor
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
Objective specification
PHN1013
SOT96-1
D
y
Z
8
c
5
EA
X
HE v M A
pin 1 index
1
e
A2
A1
4
bp
wM
Q
(A3)
A
Lp
L
detail X
θ
0 2.5 5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
UNIT max. A1 A2 A3 bp
c D(1) E(2) e
HE
L
Lp Q
v
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
inches
0.069
0.010
0.004
0.057
0.049
0.01
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.050
0.244
0.228
0.041
0.039
0.016
0.028
0.024
0.01
w y Z (1)
0.25
0.01
0.1
0.7
0.3
0.004
0.028
0.012
θ
8o
0o
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT96-1
IEC
076E03S
REFERENCES
JEDEC
EIAJ
MS-012AA
EUROPEAN
PROJECTION
ISSUE DATE
95-02-04
97-05-22
1997 Jun 20
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PHN1013.PDF ] | |
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