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PDF PHK5NQ10T Data sheet ( Hoja de datos )
| Número de pieza | PHK5NQ10T | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
N-channel TrenchMOSTM transistor
Product specification
PHK5NQ10T
FEATURES
• Low on-state resistance
• Fast switching
• Low profile surface mount
package
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDS = 100 V
ID = 5 A
RDS(ON) ≤ 50 mΩ (VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect transistor in a plastic
envelope
using
’trench’
technology.
Applications:-
• Motor and relay drivers
• d.c. to d.c. converters
The PHK5NQ10T is supplied in the
SOT96-1 (SO8) surface mounting
package.
PINNING
PIN DESCRIPTION
1-3 source
4 gate
5-8 drain
SOT96-1 (SO8)
876 5
pin 1 index
1 23
4
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
Ptot
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (tp ≤ 10 s)
Drain current (pulse peak value)
Total power dissipation
Operating junction and storage
temperature
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C;
RGS = 20 kΩ
Ta = 25 ˚C
Ta = 70 ˚C
Ta = 25 ˚C
Ta = 25 ˚C, t ≤ 10 s
Ta = 70 ˚C, t ≤ 10 s
MIN.
-
-
-
-
-
-
-
-
- 65
MAX.
100
100
± 20
5
3.6
20
2.5
1.6
150
UNIT
V
V
V
A
A
A
W
W
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-a
Rth j-a
Thermal resistance junction
to ambient
Thermal resistance junction
to ambient
CONDITIONS
Surface mounted, FR4 board, t ≤ 10 sec
Surface mounted, FR4 board
TYP.
-
150
MAX.
50
-
UNIT
K/W
K/W
August 1999
1
Rev 1.000
1 page  
Philips Semiconductors
N-channel TrenchMOSTM transistor
Product specification
PHK5NQ10T
Gate-source voltage, VGS (V)
15
14 ID = 5A
13
12
Tj = 25 C
11 VDD = 20 V
10
9
8
7 VDD = 80 V
6
5
4
3
2
1
0
0 5 10 15 20 25 30
Gate charge, QG (nC)
35
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Source-Drain Diode Current, IF (A)
10
VGS = 0 V
9
8
7
6
150 C
Tj = 25 C
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
August 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet PHK5NQ10T.PDF ] | |
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