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PDF PHI214-0851 Data sheet ( Hoja de datos )
| Número de pieza | PHI214-0851 | |
| Descripción | Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PHI214-0851 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty
1.2 - 1.4 GHz
PHI 214-0.851
Features
NPN Silicon Microwave Power Transistor
Common Emitter Configuration
Broadband Class A Operation
Matrix Geometry
Diffused Emirter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic~MetalKeramic Package
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-BaseVoltage
Collector Current (Peak)
Total Power Dissipation
VCES
v CEO
VES0
‘c
P7-7
27
20
3.5
710
7.8
V
V
V
mA
W
JunctionTemperature
Storage Temperature
( T,
!
T STG
( 200
I “C
-65 to +200
“C
I
Electrical Characteristics at 25°C
t------T')JFH!T-T.J
I
.3?>= 310
C9.>3Z.>3)
I
I
,137~4::
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I
.004z.051
UL-‘S7S-ERW!SE
NDTC-JLD’RA,NCES
AXE INCifS =035’
CM:LLlHEiE?S
=.:3!4M)
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stablility
I
%
RL
VSWR-T
VSWR-S
I
30
-
9-
- 2:l
- 1.51
V,,,=22, V,_,_(typ)=l 1.5,l,,_(-typ)=ZOO mA
% ~,,=100mW, F=l.ZO, 1.30, 1.40GI-l~
dB
-
-
I
Broadband Test Fixture Impedances
F(GHz)
1.20
Z,,(Q)
5.9 - j4.5
ZOF&v
7.4 + j6.3
1.30
1.40
6.4 - j4.0
7.1 - j4.4
7.5 + j7.7
7.4 + j8.9
-fST F!XTLIRT
ZIRCUIT
I
A-
5sn
-
ZiFI-.
9-112
Specifications Subject to Change Without Notice.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
MIA-COM, Inc.
n Europe: Tel. ~44 (1344) 869 595
Fax t44 (1344) 300 020
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PHI214-0851.PDF ] | |
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