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PDF PHB4ND40E Data sheet ( Hoja de datos )
| Número de pieza | PHB4ND40E | |
| Descripción | PowerMOS transistors FREDFET/ Avalanche energy rated | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHP4ND40E, PHB4ND40E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 400 V
ID = 4.4 A
RDS(ON) ≤ 1.8 Ω
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge ansd full bridge converters making this device particularly
suitable for inverters, lighting ballasts and motor control circuits.
The PHP4ND40E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB4ND40E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN DESCRIPTION
1 gate
tab
tab
2 drain 1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
± 30
4.4
2.7
18
83
150
UNIT
V
V
V
A
A
A
W
˚C
August 1998
1
Rev 1.100
1 page  
Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
10 ID, Drain current (Amps)
VDS > ID x RDS(on)max
8
6
4
PHP4N40
Tj = 25 C
Tj = 150 C
2
0
02468
VGS, Gate-Source voltage (Volts)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
10
gfs, Transconductance (S)
4
VDS > ID x RDS(on)max
3
2
PHP4N40
Tj = 25 C
150 C
1
0
0 2 4 6 8 10
ID, Drain current (A)
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
a
2
Normalised RDS(ON) = f(Tj)
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 2.2 A; VGS = 10 V
Product specification
PHP4ND40E, PHB4ND40E
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
1000 Junction capacitances (pF)
100
10
Ciss
PHP4N40
Coss
Crss
1
1 10 100
VDS, Drain-Source voltage (Volts)
1000
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1998
5
Rev 1.100
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PHB4ND40E.PDF ] | |
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