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PDF PHB47NQ10T Data sheet ( Hoja de datos )
| Número de pieza | PHB47NQ10T | |
| Descripción | N-channel enhancement mode field-effect transistor | |
| Fabricantes | NXP Semiconductors | |
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PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 May 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP47NQ10T in SOT78 (TO-220AB)
PHB47NQ10T in SOT404 (D2-PAK).
2. Features
s Fast switching
s Very low on-state resistance.
3. Applications
s DC to DC converters
s Switched mode power supplies.
c
4. Pinningc information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
mb
2 drain (d) [1]
mb
3 source (s)
mb mounting base;
connected to
drain (d)
MBK106
123
2
1 3 MBK116
SOT78 (TO-220AB)
SOT404 (D2-PAK)
Symbol
g
MBB076
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.
1 page  
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 10
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
VGS = 0 V; VDS = 100 V
Tj = 25 °C
Tj = 175 °C
VDS = 0 V; VGS = ±20 V
VGS = 10 V; ID = 25 A;
Figure 8 and 9
Dynamic characteristics
Tj = 25 oC
Tj = 175 °C
Qg(tot)
total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
ID = 40 A; VDD = 80 V;
VGS = 10 V; Figure 15
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 13
VDD = 30 V; RD = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
VSD source-drain (diode forward) IS = 25 A; VGS = 0 V;
voltage
Figure 14
trr
reverse recovery time
IS = 47 A;
Qr recovered charge
dIS/dt = −100 A/µs;
VGS = -10 V; VR = 30 V
Min Typ Max Unit
100 − − V
234V
1−−V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
− 20 28 mΩ
− − 76 mΩ
− 66 − nC
− 12 − nC
− 21 − nC
−
2320
3100
pF
− 315 378 pF
− 187 256 pF
− 15 23 ns
− 70 105 ns
− 83 116 ns
− 45 63 ns
−
0.85 1.2
V
− 66 − ns
− 0.24 − µC
9397 750 08243
Product data
Rev. 01 — 16 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 14
5 Page 
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: Revision history
Rev Date
CPCN
01 20010516 -
Description
Product data. Initial version.
9397 750 08243
Product data
Rev. 01 — 16 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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