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PDF MA2YD17 Data sheet ( Hoja de datos )
| Número de pieza | MA2YD17 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA2YD17
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Reverse voltage VR = 100 V is guaranteed
1.6±0.1
1
Unit: mm
0.80±0.05
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
surge current *
VR
VRM
IF(AV)
IFSM
100
100
300
1.5
V
V
mA
A
Junction temperature
Storage temperature
Tj 125 °C
Tstg −55 to +125 °C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2
0.55±0.1
5˚
0.45±0.1
0.16+–00..016
1: Anode
2: Cathode
Marking Symbol: 2T
Mini2-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
VF IF = 300 mA
IR VR = 100 V
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 0.1 IR , RL = 100 Ω
0.50 0.58
200
100
7
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: April 2004
SKH00032BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MA2YD17.PDF ] | |
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