PDF MC14029B Data sheet ( Hoja de datos )

Número de pieza	MC14029B
Descripción	Binary/Decade Up/Down Counter
Fabricantes	ON Semiconductor
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No Preview Available ! MC14029B Binary/Decade Up/Down Counter The MC14029B Binary/Decade up/down counter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. The counter consists of type D flip−flop stages with a gating structure to provide toggle flip−flop capability. The counter can be used in either Binary or BCD operation. This complementary MOS counter finds primary use in up/down and difference counting and frequency synthesizer applications where low power dissipation and/or high noise immunity is desired. It is also useful in A/D and D/A conversion and for magnitude and sign generation. Features • Diode Protection on All Inputs • Supply Voltage Range = 3.0 Vdc to 18 Vdc • Internally Synchronous for High Speed • Logic Edge−Clocked Design − Count Occurs on Positive Going Edge of Clock • Asynchronous Preset Enable Operation • Capable of Driving Two Low−Power TTL Loads or One Low−Power Schottky TTL Load Over the Rated Temperature Range • Pin for Pin Replacement for CD4029B • NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant www.onsemi.com SOIC−16 D SUFFIX CASE 751B MARKING DIAGRAM 16 14029BG AWLYWW 1 A WL YY, Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Indicator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol Parameter Value Unit VDD DC Supply Voltage Range −0.5 to +18.0 V Vin, Vout Input or Output Voltage Range (DC or Transient) −0.5 to VDD + 0.5 V Iin, Iout Input or Output Current (DC or Transient) per Pin ±10 mA PD Power Dissipation, per Package (Note 1) 500 mW TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2015 March, 2015 − Rev. 10 1 Publication Order Number: MC14029B/D 1 page MC14029B PULSE GENERATOR 500 pF VDD ID PE Q0 Cin B/D Q1 U/D CLK Q2 P0 P1 Q3 P2 P3 Cout CL 0.01 mF CERAMIC CL CL CL CL 20 ns CLK 50% 90% VARIABLE WIDTH 20 ns 10% VDD VSS Figure 1. Power Dissipation Test Circuit and Waveform PROGRAMMABLE PULSE GENERATOR VDD PE Q0 Cin B/D Q1 U/D CLK Q2 P0 P1 Q3 P2 P3 Cout VSS CL CL CL CL CL CARRY IN OR UP/DOWN OR BINARY/DECADE CLOCK tsu 50% PRESET ENABLE Q0 OR CARRY OUT 90% 10% tW trem 50% tW Cout ONLY tTHL tPHL 1/fcl 20 ns tTLH 10% 90% tPLH tPLH Figure 2. Switching Time Test Circuit and Waveforms VDD VSS VDD VSS VDD VSS VOH VOL www.onsemi.com 5 5 Page

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