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PDF MC12147 Data sheet ( Hoja de datos )

Número de pieza MC12147
Descripción LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER
Fabricantes Motorola Semiconductors 
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Order this document by MC12147/D
Low Power Voltage
Controlled Oscillator Buffer
The MC12147 is intended for applications requiring high frequency signal
generation up to 1300 MHz. An external tank circuit is used to determine the
desired frequency of operation. The VCO is realized using an
emitter–coupled pair topology. The MC12147 can be used with an integrated
PLL IC such as the MC12202 1.1 GHz Frequency Synthesizer to realize a
complete PLL sub–system. The device is specified to operate over a voltage
supply range of 2.7 to 5.5 V. It has a typical current consumption of 13 mA at
3.0 V which makes it attractive for battery operated handheld systems.
NOTE: The MC12147 is NOT suitable as a crystal oscillator.
Operates Up to 1.3 GHz
Space–Efficient 8–Pin SOIC or SSOP Package
Low Power 13 mA Typical @ 3.0 V Operation
Supply Voltage of 2.7 to 5.5 V
Typical 900MHz Performance
– Phase Noise –105 dBc/Hz @ 100 kHz Offset
– Tuning Voltage Sensitivity of 20 MHz/V
Output Amplitude Adjustment Capability
Two High Drive Outputs With a Typical Range from –8.0 to –2.0 dBm
The device has two high frequency outputs which make it attractive for
transceiver applications which require both a transmit and receive local
oscillator (LO) signal. The outputs Q and QB are available for servicing the
receiver IF and transmitter up–converter single–ended. In receiver
applications, the outputs can be used together if it is necessary to generate a
differential signal for the receiver IF. Because the Q and QB outputs are open
collector, terminations to the VCC supply are required for proper operation.
Since the outputs are complementary, BOTH outputs must be terminated
even if only one is needed. The Q and QB outputs have a nominal drive level
of –8dBm to conserve power. If addition signal amplitude is needed, a level
adjustment pin (CNTL) is available, which when tied to ground, boosts the
nominal output levels to –2.0 dBm.
External components required for the MC12147 are: (1) tank circuit (LC
network); (2) Inductor/capacitor to provide the termination for the open
collector outputs; and (3) adequate supply voltage bypassing. The tank
circuit consists of a high–Q inductor and varactor components. The
preferred tank configuration allows the user to tune the VCO across the full
supply range. VCO performance such as center frequency, tuning voltage
sensitivity, and noise characteristics are dependent on the particular
components and configuration of the VCO tank circuit.
MC12147
LOW POWER
VOLTAGE CONTROLLED
OSCILLATOR BUFFER
SEMICONDUCTOR
TECHNICAL DATA
8
1
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
8
1
SD SUFFIX
PLASTIC PACKAGE
CASE 940
(SSOP–8)
PIN CONNECTIONS
NC Q GND QB
8765
PIN NAMES
Pin
VCC
CNTL
TANK
VREF
QB
GND
Q
Function
Power Supply
Amplitude Control for Q, QB Output Pair
Tank Circuit Input
Bias Voltage Output
Open Collector Output
Ground
Open Collector Output
1234
VCC CNTL TANK VREF
(Top View)
ORDERING INFORMATION
Device
Operating
Temperature Range
Package
MC12147D
TA = – 40° to +85°C
MC12147SD
SO–8
SSOP–8
© Motorola, Inc. 1997
Rev 2

1 page




MC12147 pdf
MC12147
is a function of the capacitance value. To simplify the
selection of C1 and Cb, a table has been constructed based
on the intended operating frequency to provide
recommended starting points. These may need to be altered
depending on the value of the varactor selected.
Frequency
200 – 500 MHz
500 – 900 MHz
900 – 1200 MHz
C1
47 pF
5.1 pF
2.7 pF
Cb
47 pF
15 pF
15 pF
The value of the Cb capacitor influences the VCO supply
pushing. To minimize pushing, the Cb capacitor should be
kept small. Since C1 is in series with the varactor, there is a
strong relationship between these two components which
influences the VCO sensitivity. Increasing the value of C1
tends to increase the sensitivity of the VCO.
The parasitic contributions Lp and Cp are related to the
MC12147 as well as parasitics associated with the layout,
tank components, and board material selected. The input
capacitance of the device, bond pad, the wire bond,
package/lead capacitance, wire bond inductance, lead
inductance, printed circuit board layout, board dielectric, and
proximity to the ground plane all have an impact on these
parasitics. For example, if the ground plane is located directly
below the tank components, a parasitic capacitor will be
formed consisting of the solder pad, metal traces, board
dielectric material, and the ground plane. The test fixture
used for characterizing the device consisted of a two sided
copper clad board with ground plane on the back. Nominal
values where determined by selecting a varactor and
characterizing the device with a number of different tank/
frequency combinations and then performing a curve fit with
the data to determine values for Lp and Cp. The nominal
values for the parasitic effects are seen below:
Parasitic Capacitance
Parasitic Inductance
Cp 4.2 pF
Lp 2.2 nH
These values will vary based on the users unique circuit
board configuration.
Basic Guidelines:
1. Select a varactor with high Q and a reasonable
capacitance versus voltage slope for the desired
frequency range.
2. Select the value of Cb and C1 from the table above .
3. Calculate a value of inductance (L) which will result in
achieving the desired center frequency. Note that L
includes both LT and Lp.
4. Adjust the value of C1 to achieve the proper VCO
sensitivity.
5. Re–adjust value of L to center VCO.
6. Prototype VCO design using selected components. It
is important to use similar construction techniques and
materials, board thickness, layout, ground plane
spacing as intended for the final product.
7. Characterize tuning curve over the voltage operation
conditions.
8. Adjust, as necessary, component values – L,C1, and
Cb to compensate for parasitic board effects.
9. Evaluate over temperature and voltage limits.
10. Perform worst case analysis of tank component
variation to insure proper VCO operation over full
temperature and voltage range and make any
adjustments as needed.
Outputs Q and QB are open collector outputs and need a
inductor to VCC to provide the voltage bias to the output
transistor. In most applications, dc–blocking capacitors are
placed in series with the output to remove the dc component
before interfacing to other circuitry. These outputs are
complementary and should have identical inductor values for
each output. This will minimize switching noise on the VCC
supply caused by the outputs switching. It is important that
both outputs be terminated, even if only one of the outputs is
used in the application.
Referring to Figure 2, the recommended value for L2a and
L2b should be 47 nH and the inductor components
resonance should be at least 300 MHz greater than the
maximum operating frequency. For operation above 1100
MHz, it may be necessary to reduce that inductor value to 33
nH. The recommended value for the coupling capacitors
C6a, C6b, and C7 is 47 pF. Figure 2 also includes decoupling
capacitors for the supply line as well as decoupling for the
output inductors. Good RF decoupling practices should be
used with a series of capacitors starting with high quality 100
pF chip capacitors close to the device. A typical layout is
shown below in Figure 3.
The output amplitude of the Q and QB can be adjusted
using the CNTL pin. Refering to Figure 1, if the CNTL pin is
connected to ground, additional current will flow through the
current source. When the pin is left open, the nominal current
flowing through the outputs is 4 mA. When the pin is
grounded, the current increases to a nominal value of 10 mA.
So if a 50 ohm resistor was connected between the outputs
and VCC, the output amplitude would change from 200 mV
pp to 500 mV pp with an additional current drain for the
device of 6 mA. To select a value between 4 and 10 mA, an
external resistor can be added to ground. The equation below
is used to calculate the current.
) )(200 136 Rext) 0.8V
+ )Iout(nom)
200 (136 Rext)
Figure 4 through Figure 13 illustrate typical performance
achieved with the MC12147. The curves illustrate the tuning
curve, supply pushing characteristics, output power, current
drain, output spectrum, and phase noise performance. In
most cases, data is present for both a 750 MHz and 1200
MHz tank design. The table below illustrates the component
values used in the designs.
Component 750MHz Tank 1200MHz Tank Units
R1 5000
5000
C1 5.1
2.7 pF
LT 4.7
1.8 nH
CV
3.7 @ 1.0 V
3.7 @ 1.0 V
pF
11 @ 4.0 V
11 @ 4.0 V
Cb 100*
15 pF
C6, C7
47
33 pF
L2 47
47 nH
* The value of Cb should be reduced to minimize pushing.
MOTOROLA RF/IF DEVICE DATA
5

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MC12147 arduino
HP 3048A
0
MC12147
Figure 12. Typical Phase Noise Plot, 750 MHz Tank
CARRIER
784.2MHz
–25
–50
–75
–100
–125
–150
–170
100
1K
10K 100K
1M
L(f) [dBc/Hz] vs f[Hz]
10M 40M
HP 3048A
0
Figure 13. Typical Phase Noise Plot, 1200 MHz Tank
CARRIER
1220MHz
–25
–50
–75
–100
–125
–150
–170
100
1K
10K 100K
1M
L(f) [dBc/Hz] vs f[Hz]
10M 40M
MOTOROLA RF/IF DEVICE DATA
11

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