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Número de pieza | PF5102 | |
Descripción | N-Channel Switch | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PF5102 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! PF5102
N-Channel Switch
• This device is designed for low level analog switching, sample and
hold circuits and chopper stabized amplifiers.
• Sourced from process 51.
• See J111 for characteristics.
1 TO-92
Absolute Maximum Ratings * TA=25°C unless otherwise noted
1. Drain 2. Source 3. Gate
Symbol
Parameter
Value
Units
VDG Drain-Gate Voltage
40
VGS Gate-Source Voltage
-40
IGF Forward Gate Current
50
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
V
A
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS
IGSS
Gate-Source Breakdwon Voltage
Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
VGS(f)
Gate-Source Forward Voltage
On Characteristics
IC = -1.0µA, VDS = 0
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, TA = 125°C
VDS = 15V, ID = 1.0nA
IG = 1.0mA, VDS = 0
IDSS
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
VDS = 15V, VGS = 0
gfs Forward Transfer Conductance
goss Output Conductance
Ciss Input Capacitace
Crss Reverse Transfer Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
VDS = 15V, VGS = 0, f = 1.0KHz
VDS = 15V, ID = 500µA, f = 1.0KHz
VDG = 15V, VGS = 0, f = 1.0MHz
VDG = 15V, VGS = 0, f = 1.0MHz
Min. Max. Units
-40
-1.0
-0.2
-0.7 -1.6
1.0
V
nA
µA
V
4.0 20
nA
11,000
µmhous
25 µmhous
16 pF
6 pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
125
357
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, January 2003
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet PF5102.PDF ] |
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