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PDF MBV109T1 Data sheet ( Hoja de datos )
| Número de pieza | MBV109T1 | |
| Descripción | Silicon Epicap Diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechanical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
MMBV109LT1
MBV109T1
MV209
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
MBV109T1 MMBV109LT1 MV209
Reverse Voltage
Forward Current
Device Dissipation
@T A = 25°C
Derate above 25°C
VR
IF
PD
280
2.8
30
200
200 200
2.0 1.6
Junction Temperature
Storage Temperature Range
DEVICEMARKING
TJ
T stg
+125
–55 to +150
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
( I R = 10 µ Adc)
Reverse Voltage Leakage Current
( V R = 25Vdc)
Diode Capacitance Temperature Coefficient
(V R = 3.0 Vdc, f = 1.0 MHz)
V (BR)R
IR
TC C
30
—
—
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
Typ
—
—
300
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
Max
—
0.1
—
Unit
Vdc
mAdc
ppm/°C
C T Diode Capacitance
VR =3.0Vdc, f =1.0MHz
pF
Q, Figure of
Merit
V R = 3.0Vdc
f = 50MHz
CR, Capacitance
Ratio
C3 / C 25
f=1.0MHz (Note 1)
Device Type
Min Nom Max
Min
Min Max
MBV109T1, MMBV109LT1, MV209 26 29
32
200
5.0 6.5
1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
MBV109. MMBV109*. MV209*–1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBV109T1.PDF ] | |
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