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PDF MBRS1100 Data sheet ( Hoja de datos )
| Número de pieza | MBRS1100 | |
| Descripción | Schottky Power Rectifier(Surface Mount Power Package) | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de MBRS1100 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBRS1100T3/D
™Designer's Data Sheet
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in
a large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally
suited for low voltage, high frequency rectification, or as free wheeling and
polarity protection diodes, in surface mount applications where compact size
and weight are critical to the system. These state-of-the-art devices have the
following features:
• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• High Blocking Voltage — 100 Volts
• 150°C Operating Junction Temperature
• Guardring for Stress Protection
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C
Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Marking: B110
MBRS1100T3
Motorola Preferred Device
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
CASE 403A–03
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM 100 Volts
VRWM
VR
Average Rectified Forward Current
TL = 120°C
TL = 100°C
IF(AV)
1.0 Amps
2.0
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
50 Amps
Operating Junction Temperature
Voltage Rate of Change
TJ
dv/dt
– 65 to +150
10
°C
V/ns
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Lead (TL = 25°C)
ELECTRICAL CHARACTERISTICS
RθJL
22 °C/W
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 A, TJ = 25°C)
VF 0.75 Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR mA
0.5
5.0
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Rev 2
©RMeoctotriofilea,rInDce. 1v9ic96e Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBRS1100.PDF ] | |
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