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PDF MBR3035PT Data sheet ( Hoja de datos )
| Número de pieza | MBR3035PT | |
| Descripción | 30 Ampere Schottky Barrier Rectifiers | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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MBR3035PT - MBR3060PT
Features
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
• Metal silicon junction, majority carrier
conduction.
• High current capacity, low forward
voltage drop.
• Guard ring for over voltage protection.
123
TO-3P/TO-247AD
PIN 1
PIN 3
+
CASE
PIN 2
Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
3035PT 3045PT 3050PT
VRRM
Maximum Repetitive Reverse Voltage
35 45 50
IF(AV)
Average Rectified Forward Current
30
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
200
Tstg Storage Temperature Range
-65 to +175
TJ Operating Junction Temperature
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3060PT
60
Units
V
A
A
°C
°C
Thermal Characteristics
Symbol
PD
RθJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Lead
Value
3.0
1.4
Units
W
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
VF Forward Voltage IF = 20 A, TC = 25°C
IF = 20 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
IR Reverse Current @ rated VR TA = 25°C
TA = 125°C
IRRM Peak Repetitive Reverse Surge Current
2.0 us Pulsu Width, f = 1.0 KHz
Device
3035PT 3045PT
-
0.60
0.76
0.72
3050PT 3060PT
0.75
0.65
-
-
Units
V
V
V
V
1.0 5.0 mA
60 100 mA
1.0 0.5 A
2001 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT, Rev. C
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBR3035PT.PDF ] | |
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