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PDF MBR2535CT Data sheet ( Hoja de datos )

Número de pieza MBR2535CT
Descripción Schottky Rectifier ( Diode )
Fabricantes General Semiconductor 
Logotipo General Semiconductor Logotipo



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No Preview Available ! MBR2535CT Hoja de datos, Descripción, Manual

MBR2535CT THRU MBR2560CT
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes
TO-220AB
160 (4.06)
140 (3.56)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
1 23
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 3
Dimensions in inches and (millimeters)
PIN 2
CASE
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Dual rectifier construction, positive center-tap
Metal silicon junction,
majority carrier conduction
Low power loss,
high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case: JEDEC TO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any Mounting Torque: 5 in. - lbs. max.
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS MBR2535CT MBR2545CT MBR2550CT MBR2560CT
Maximum repetitive peak reverse voltage
VRRM
35
45 50
60
Maximum working peak reverse voltage
Maximum DC blocking voltage
VRWM
VDC
35
35
45 50
45 50
60
60
Maximum average forward rectified current at TC=130°C
Peak repetitive forward current per leg at TC=130°C
(rated VR, square wave, 20 KHZ)
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
I(AV)
IFRM
IFSM
30.0
30.0
150.0
Peak repetitive reverse surge current (NOTE 1)
IRRM
1.0
0.5
Maximum instantaneous forward voltage IF=15.0A,TC=25°C
per leg at: (NOTE 2)
IF=15.0A,TC=25°C
IF= 30A, TC=25°C
IF= 30A, TC=125°C
Maximum instantaneous reverse current at
rated DC blocking voltage per leg (NOTE 2)
TC=25°C
TC=125°C
Maximum thermal resistance (NOTE 3)
Voltage rate of change (rated VR)
VF
IR
RΘJC
dv/dt
-
-
0.82
0.73
0.2
40.0
1.5
10,000
0.75
0.65
-
-
1.0
50.0
Operating junction temperature range
Storage temperature range
NOTES:
(1) 2.0µs pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case per leg
TJ
TSTG
-65 to +150
-65 to +175
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
Amps
Volts
mA
°C/W
V/µs
°C
°C
4/98

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