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Número de pieza | LS5906 | |
Descripción | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET | |
Fabricantes | Linear Integrated Systems | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LS5906 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Linear Integrated Systems
LS5905 LS5906 LS5907
LS5908 LS5909
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
LOW PINCHOFF
|∆VGS1-2 /∆T|= 5µV/°C max.
IG = 150fA TYP.
VP= 2V TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
S1 G2
G1 3
5 S2
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS
Gate Voltage to Drain or Source 40V
-VDSO
-IG(f)
-IG
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
10mA
10µA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125°C
D1
D2
G1 S2
22 X 20 MILS
D1 2
1
S1
6 D2
7
G2
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905
|∆VGS1-2 /∆T| max. Drift vs. Temperature
5
10 20 40 40
|VGS1-2| max.
-IGmax.
-IGmax.
-IGSSmax.
-IGSSmax.
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
5 5 10 15 15
1 1 1 13
1 1 1 13
2 2 2 25
5 5 5 5 10
UNITS CONDITIONS
µV/°C
mV
pA
VDG= 10V, ID= 30µA
TA=-55°C to +125°C
VDG=10V ID= 30µA
nA TA= +125°C
pA VDS= 0V VGS= 20V
nA TA= +125°C
SYMBOL
BVGSS
BVGGO
Yfss
Yfs
|Yfs1-2/Yfs|
IDSS
|IDSS1-2/IDSS|
VGS(off) or VP
VGS
IGGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
MIN.
40
40
TYP.
60
--
70 300
50 100
-- 1
60 400
-- 2
0.6 2
-- --
-- 1
MAX.
--
--
UNITS
V
V
CONDITIONS
VDS= 0
IG= 1nA
ID= 1nA
ID= 0
IS= 0
500
µmho VDG= 10V VGS= 0
f= 1kHz
200 µmho VDG= 10V ID= 30µA f= 1kHz
5%
1000
5
4.5
4
--
µA
%
V
V
pA
VDG= 10V VGS= 0
VDS= 10V
VDS= 10V
VGG=20V
ID= 1nA
ID= 30µA
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LS5906.PDF ] |
Número de pieza | Descripción | Fabricantes |
LS5905 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET | Linear Integrated Systems |
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LS5905-9 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET | Linear Integrated Systems |
LS5906 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET | Linear Integrated Systems |
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