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PDF LMA184 Data sheet ( Hoja de datos )

Número de pieza LMA184
Descripción 2-18 GHz MESFET Amplifier
Fabricantes Filtronic Compound Semiconductors 
Logotipo Filtronic Compound Semiconductors Logotipo



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Filtronic
Solid State
2-18 GHz MESFET Amplifier
LMA184
Features
5.5dB Typical Noise Figure
7.5dB Typical Gain
15dBm Saturated Output Power
12dB Input/Output Return Loss Typical
2-18GHz Frequency Bandwidth
+4 Volts Dual Bias Supply
DC Decoupled RF Output
Chip Size : 1.62mmX2.38mm (.064”X.094”)
Chip Thickness : 100µm
Pad Dimension : 100µm2
Description
The Filtronic LMA184 is a GaAs monolithic distributive amplifier which operates from 2 to 18GHz. This LMA184 amplifier produces a typical
gain of 7.5dB and a noise figure of less than 5.5dB. The LMA184 is suitable for gain block, low noise and driver amplifier applications. DC
decoupled output RF port. Ground is provided to the circuitry through vias to the backside metallization.
Electrical Specifications at Ta=25°C
(VDD=+4.0V, Zin=Zout=50)
Symbol
BW
S21
Idss
S21
NF
RLin
RLout
S12
P-1dB
Parameter
Operating Bandwidth
Small Signal Gain
Drain Current at Saturation
Small Signal Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
1-dB Gain Compression Power
Test Conditions
VD=4V, Ids=.5Idss
@ .5Idss
Limit
Min. Typ. Max.
2 18
6 7.5
60 120 180
±.5 ±1
5.5 7
-14 -10
-14 -10
-13 -16
10 12
Units
GHz
dB
mA
dB
dB
dB
dB
dB
dBm
Absolute Maximum Ratings
Symbol
Vdd
Idd
Pin
Pt
Tch
Tstg
Tmax.
Parameter/Conditions
Drain Supply Voltage
Total Drain Current
RF Input Power
Power Dissipation
Operating Channel Temperature
Storage Temperature
Max. Assembly Temp.
(1 min. max.)
Min.
-65
Max.
8
180
20
1.5
150
165
300
Units
Volts
mA
dBm
W
°C
°C
°C
Notes :
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.
Phone: (408) 988-1845
DSS 008 WC
Internet: http://www.FiltronicSolidState.com
Fax: (408) 970-9950

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