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PDF APT8052BLL Data sheet ( Hoja de datos )

Número de pieza APT8052BLL
Descripción Power MOS 7 MOSFET
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! APT8052BLL Hoja de datos, Descripción, Manual

APT8052BLL
APT8052SLL
800V 15A 0.520
POWER MOS 7 R MOSFET
BLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
lRoDsSs(OeNs)
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
D3PAK
SLL
• Lower Input Capacitance • Increased Power Dissipation
D
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT8052BLL_SLL
UNIT
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
800 Volts
15
Amps
60
±30 Volts
±40
298 Watts
2.38 W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
15
30
1210
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.5A)
800
0.52
IDSS
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
100
500
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
35
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com

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APT8052BLL pdf
10%
td(on)
tr
5%
90%
10%
Switching Energy
Gate Voltage
TJ125°C
Drain Current
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
VDD
APT15DF100
ID VDS
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
90%
td(off)
90%
tf
10%
0
APT8052BLL_SLL
GateVoltage TJ125°C
Drain Voltage
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
D3PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated

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