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PDF APT8052BFLL Data sheet ( Hoja de datos )
| Número de pieza | APT8052BFLL | |
| Descripción | Power MOS 7 FREDFET | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT8052BFLL
APT8052SFLL
800V 15A 0.520Ω
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering
aanlodnQg g.wiPthoweexrcMepOtiSon7a®llcyomfabsitnesswliotcwheinr gcosnpdeuectdiosn
and switching
inherent with
lRoDsSs(eONs)
APT's
patented metal gate structure.
BFLL
TO-247
D3PAK
SFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT8052BFLL_SFLL UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
800 Volts
15
Amps
60
±30 Volts
±40
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
298
2.38
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
15
30
1210
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.5A)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
800
3
0.520
250
1000
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts
1 page  
Typical Performance Curves
10%
td(on)
tr
5%
90%
10%
Switching Energy
Gate Voltage
TJ125°C
Drain Current
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
VDD
APT15DF100
ID VDS
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
APT8052BFLL_SFLL
90%
td(off)
90%
tf
10%
0
GateVoltage TJ125°C
Drain Voltage
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
D3PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
5 Page | ||
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