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PDF APT6025SLL Data sheet ( Hoja de datos )
| Número de pieza | APT6025SLL | |
| Descripción | Power MOS 7 MOSFET | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT6025BLL
APT6025SLL
600V 24A 0.250Ω
POWER MOS 7 R MOSFET
BLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
D3PAK
SLL
D
G
S
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
All Ratings: TC = 25°C unless otherwise specified.
APT6025BLL_SLL
UNIT
600 Volts
24
Amps
96
±30 Volts
±40
325 Watts
2.60
W/°C
-55 to 150
300
°C
24 Amps
30
1300
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 12A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
600
3
0.250
100
500
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts
1 page  
10 %
t
d(on)
t
r
5%
90%
10 %
Switching Energy
Gate Voltage
TJ = 125 C
Drain Current
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
APT6025BLL_SLL
90%
td(off)
90%
tf
10%
Gate Voltage TJ = 125 C
Drain Voltage
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
VDD
APT15DF60
ID VDS
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
D3PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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