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PDF APT6017LLL Data sheet ( Hoja de datos )
| Número de pieza | APT6017LLL | |
| Descripción | Power MOS 7 MOSFET | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT6017B2LL
APT6017LLL
600V 35A 0.170Ω
POWER MOS 7 R MOSFET
B2LL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering
and Qg. Power MOS 7® combines lower conduction and switching
lRoDsSs(eONs)
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LLL
• Lower Input Capacitance • Increased Power Dissipation
D
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT6017B2LL_LLL
UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
600 Volts
35
Amps
140
±30 Volts
±40
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
500 Watts
4.0 W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
35
35
1600
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 17.5A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN TYP MAX UNIT
600 Volts
0.170 Ohms
100
µA
500
±100 nA
3 5 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page  
10%
td(on)
Gate Voltage
TJ125°C
tr
5%
10%
Switching Energy
90%
Drain Current
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
VDD
APT30DF60
ID VDS
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
APT6017B2LL_LLL
90%
td(off)
Gate Voltage
TJ125°C
Drain Voltage
90%
tf
Switching Energy
10%
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
5 Page | ||
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| PDF Descargar | [ Datasheet APT6017LLL.PDF ] | |
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