|
|
PDF APT50M75JLLU2 Data sheet ( Hoja de datos )
| Número de pieza | APT50M75JLLU2 | |
| Descripción | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APT50M75JLLU2 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
APT50M75JLLU2
APT50M75JLLU2
500V 51A 0.075W
POWER MOS 7TM
SK
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
G D SOT-227
ISOTOP®
"UL Recognized"
D
K
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Easier To Drive
G
• PFC "Boost" Configuration
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT50M75JLLU2
Drain-Source Voltage
LContinuous Drain Current @ TC = 25°C
APulsed Drain Current 1
ICGate-Source Voltage Continuous
HNGate-Source Voltage Transient
EC NTotal Power Dissipation @ TC = 25°C
T IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC ALead Temperature: 0.063" from Case for 10 Sec.
VA RMAvalanche Current 1 (Repetitive and Non-Repetitive)
D ORepetitive Avalanche Energy 1
A INFSingle Pulse Avalanche Energy 4
500
51
204
±30
±40
465
3.72
-55 to 150
300
51
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
500
51
3
0.075
100
500
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page  
APT50M75JLLU2
100
1600
TJ = 100°C
VR = 350V
80
1200
TJ = 150°C
60
TJ = 100°C
60A
800
40 TJ = 25°C
30A
TJ = -55°C
20
AL0
IC0 0.5 1.0 1.5 2.0 2.5
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
NFigure 15, Forward Voltage Drop vs Forward Current
H40
CTJ = 100°C
E NVR=350V
T IO30
60A
NCE MAT20
VA R30A
AD INFO10
15A
400
15A
0
10
50 100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 16, Reverse Recovery Charge vs Current Slew Rate
2.0
1.6
1.2
trr
0.8 IRRM
0.4
Qrr
trr
Qrr
0 0 200 400 600 800 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 17, Reverse Recovery Current vs Current Slew Rate
200
TJ = 100°C
VR = 350V
160
60A
120 30A
15A
80
0.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 18, Dynamic Parameters vs Junction Temperature
2500
2000
TJ = 100°C
VR = 350V
IF = 30A
25
20
1500
Vfr
15
1000
10
40
0
0 200 400 600 800 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 19, Reverse Recovery Time vs Current Slew Rate
800
500
500 5
tfr
00
0 200 400 600 800 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate
100
50
30
0.01
0.05 0.1
0.5 1
5
VR, REVERSE VOLTAGE (VOLTS)
Figure 21, Junction Capacitance vs Reverse Voltage
10
50 100 200
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT50M75JLLU2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APT50M75JLLU2 | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. | Advanced Power Technology |
| APT50M75JLLU3 | ISOTOP Buck chopper MOSFET Power Module |  Microsemi Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |