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PDF APT50M65B2FLL Data sheet ( Hoja de datos )
| Número de pieza | APT50M65B2FLL | |
| Descripción | Power MOS 7 FREDFET | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT50M65B2FLL
APT50M65LFLL
500V 67A 0.065Ω
POWER MOS 7 R FREDFET B2FLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses
and Q
are addressed
. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
g
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
T-MaxTM
TO-264
LFLL
D
G
S
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
STATIC ELECTRICAL CHARACTERISTICS
All Ratings: TC = 25°C unless otherwise specified.
APT50M65B2FLL_LFLL UNIT
500 Volts
67
Amps
268
±30
Volts
±40
694 Watts
5.5 W/°C
-55 to 150
300
°C
67 Amps
50
3000
mJ
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, 33.5A)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
500
3
0.065
250
1000
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts
1 page  
Typical Performance Curves
10 %
t
d(on)
t
r
90%
Gate Voltage
TJ = 125 C
Drain Current
10 %
Switching Energy
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
VDD
APT60DF60
IC VCE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
90%
td(off)
90%
Switching Energy
APT50M65B2FLL - LFLL
Gate Voltage
TJ = 125 C
Drain Voltage
10%
tf 0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
T-MAX® (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
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